ST(B,P)12NM50(FP,-1) Datasheet by STMicroelectronics

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123

TO-220

TAB

TO-220FP

TAB

D PAK

NG1D2TS3

D(2, TAB)

G(1)

S(3)

Features

Order codes VDS RDS(on) max. ID

STB12NM50T4

500 V 350 mΩ 12 ASTP12NM50

STP12NM50FP

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Applications

• Switching applications

Description

These N-channel Power MOSFETs are developed using STMicroelectronics'

revolutionary MDmesh technology, which associates the multiple drain process with

the company's PowerMESH horizontal layout. These devices offer extremely low on-

resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's

proprietary strip technique, these Power MOSFETs boast an overall dynamic

performance which is superior to similar products on the market.

Product status link

STB12NM50T4

STP12NM50

STP12NM50FP

N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs

in a D²PAK, TO-220 and TO-220FP packages

STB12NM50T4, STP12NM50, STP12NM50FP

Datasheet

DS1944 - Rev 12 - October 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

1Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter

Value

Unit

D²PAK, TO-220 TO-220FP

VGS Gate-source voltage ±30 V

Drain current (continuous) at TC = 25 °C 12 12(1)

Drain current (continuous) at TC = 100 °C 7.5 7.5(1)

IDM(2) Drain current pulsed 48 48(1) A

PTOT Total power dissipation at TC = 25 °C 160 35 W

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s, TC = 25 °C) 2.5 kV

dv/dt(3) Peak diode recovery voltage slope 15 V/ns

TJOperating junction temperature range

-65 to 150

°C

Tstg Storage temperature range °C

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDD = 80% V(BR)DSS.

Table 2. Thermal data

Symbol Parameter

Value

Unit

D²PAK TO-220 TO-220FP

Rthj-case Thermal resistance junction-case 2.78 3.57 °C/W

Rthj-a Thermal resistance junction-ambient 62.5 °C/W

Rthj-pcb(1) Thermal resistance junction-pcb 35 °C/W

1. When mounted on an 1-inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAS

Avalanche current, repetitive or not repetitive

(pulse width limited by TJ max) 6 A

EAS

Single-pulse avalanche energy

(starting TJ = 25 °C, ID = IAS, VDD = 50 V) 400 mJ

STB12NM50T4, STP12NM50, STP12NM50FP

Electrical ratings

DS1944 - Rev 12 page 2/20

2Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 μA 500 V

IDSS Zero gate voltage drain current

VGS = 0 V, VDS = 500 V 1

µA

VGS = 0 V, VDS = 500 V, TC = 125 °C (1) 10

IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 4 5 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A 300 350 mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

- 1000 - pF

Coss Output capacitance - 250 - pF

Crss Reverse transfer capacitance - 20 - pF

Coss eq.(1) Equivalent output capacitance VDS = 0 to 400 V, VGS = 0 V - 90 - pF

td(on) Turn-on Delay Time VDD = 250 V, ID = 6 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for resistive

load switching times and

Figure 18. Switching time waveform)

- 20 - ns

trRise Time - 10 - ns

QgTotal gate charge VDD = 400 V, ID = 12 A, VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

- 28 - nC

Qgs Gate-source charge - 8 - nC

Qgd Gate-drain charge - 16 - nC

RgGate input resistance f = 1 MHz, gate DC Bias = 0,

test signal level = 20 mV, open drain - 1.6 - Ω

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

STB12NM50T4, STP12NM50, STP12NM50FP

Electrical characteristics

DS1944 - Rev 12 page 3/20

Table 6. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 12 A

ISDM (1) Source-drain current (pulsed) - 48 A

VSD (2) Forward on voltage VGS = 0 V, ISD = 12 A - 1.5 V

trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs,

VDD = 100 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

- 270 ns

Qrr Reverse recovery charge - 2.23 µC

IRRM Reverse recovery current - 16.5 A

trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs,

VDD = 100 V, TJ = 150 °C

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

- 340 ns

Qrr Reverse recovery charge - 3 µC

IRRM Reverse recovery current - 18 A

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STB12NM50T4, STP12NM50, STP12NM50FP

Electrical characteristics

DS1944 - Rev 12 page 4/20

m' o“ m‘m‘oz Vu, nmsu-c mm m. o 7‘“; 7‘40‘Ww4aavusoo |n(A) a 5 m ‘5 20 VMV) K 10“ u m SINGLE PuLsz 10" 10’5' 10“ m” to“ 10" Ms) MA} u 4 s ‘2 ‘5 WW)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for D²PAK and TO-220

HV27510

Figure 2. Thermal impedance for D²PAK and TO-220

Figure 3. Safe operating area for TO-220FP

HV27450

Figure 4. Thermal impedance for TO-220FP

10-1

10-2

10-3

tp(s)

10-4 10-3 10-2 10-1 10-0

= K*R

thJ-c

δ =t

/ Ƭ

pƬ

δ =0.5

0.01

Single pulse

0.2

0.1

0.02

0.05

GC20521

Figure 5. Output characteristics

HV00002

Figure 6. Transfer characteristics

HV00003

STB12NM50T4, STP12NM50, STP12NM50FP

Electrical characteristics (curves)

DS1944 - Rev 12 page 5/20

RDs(on7 (mm) 500 600 400 200 o 5 m ‘5 20 MA) C(PF) 2000 1500 tooo SOD —5u u 50 mm 40 WW) 1513 L (“(2) Vcs(V) Vns=4UDV \n=12A 15 t2 ‘ 5 20 25 Qg(r\C) Vnsm) (norm) 1.2 n, =250,uA DB 0.5 0‘4 Vsu(V) 1 0 DB :15 0'2 50 IDO ‘SOT (”c) 20 ‘suW

Figure 7. Static drain-source on-resistance

HV00004

Figure 8. Gate charge vs gate-source voltage

HV00005

Figure 9. Capacitance variations

GC85600

Figure 10. Normalized gate threshold voltage vs

temperature

GC74100

Figure 11. Normalized on resistance vs temperature

GC85610

Figure 12. Source-drain diode forward characteristics

GC85620

STB12NM50T4, STP12NM50, STP12NM50FP

Electrical characteristics (curves)

DS1944 - Rev 12 page 6/20

3Test circuits

Figure 13. Test circuit for resistive load switching times

AM01468v1

D.U.T.

2200

μF VDD

3.3

μF

pulse width

VGS

Figure 14. Test circuit for gate charge behavior

AM01469v1

47 kΩ 1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST 100 Ω

100 nF

D.U.T.

pulse width

VGS

2200

μF

VDD

Figure 15. Test circuit for inductive load switching and

diode recovery times

AM01470v1

D.U.T.

25 Ω

100 µH

µF

3.3 1000

µF VDD

D.U.T.

fast

diode

Figure 16. Unclamped inductive load test circuit

AM01471v1

D.U.T.

VDD

pulse width

3.3

µF

2200

µF

Figure 17. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDD

IDM

Figure 18. Switching time waveform

AM01473v1

VGS 90%

VDS

90%

10%

90%

10%

ton

td(on) tr

toff

td(off) tf

STB12NM50T4, STP12NM50, STP12NM50FP

Test circuits

DS1944 - Rev 12 page 7/20

J/L L 1 j H , _ v L2 : b 4,787+ \ + J L ‘_A_. [14» c2» [24' T ‘ =I \ E’ D] D \ 7E7 / ‘ ‘ L ' /. \ ‘ m 702 J1 ‘ THERMAL PAD [22 C SHUNG PLANE COPLANAR/TY A 1 —. \ R \ GAUGE PLANE V2

4Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,

depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product

status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 D²PAK (TO-263) type A package information

Figure 19. D²PAK (TO-263) type A package outline

0079457_26

STB12NM50T4, STP12NM50, STP12NM50FP

Package information

DS1944 - Rev 12 page 8/20

Table 7. D²PAK (TO-263) type A package mechanical data

Dim.

Min. Typ. Max.

A4.40 4.60

A1 0.03 0.23

b 0.70 0.93

b2 1.14 1.70

c 0.45 0.60

c2 1.23 1.36

D 8.95 9.35

D1 7.50 7.75 8.00

D2 1.10 1.30 1.50

E 10.00 10.40

E1 8.30 8.50 8.70

E2 6.85 7.05 7.25

e 2.54

e1 4.88 5.28

H 15.00 15.85

J1 2.49 2.69

L 2.29 2.79

L1 1.27 1.40

L2 1.30 1.75

R 0.40

V2 0° 8°

STB12NM50T4, STP12NM50, STP12NM50FP

D²PAK (TO-263) type A package information

DS1944 - Rev 12 page 9/20

.7 72.204» 7.60 2.54 ‘ 3.50 76.90

Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm)

Footprint_26

STB12NM50T4, STP12NM50, STP12NM50FP

D²PAK (TO-263) type A package information

DS1944 - Rev 12 page 10/20

4.2 TO-220 type A package information

Figure 21. TO-220 type A package outline

0015988_typeA_Rev_23

STB12NM50T4, STP12NM50, STP12NM50FP

TO-220 type A package information

DS1944 - Rev 12 page 11/20

Table 8. TO-220 type A package mechanical data

Dim.

Min. Typ. Max.

A4.40 4.60

b 0.61 0.88

b1 1.14 1.55

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10.00 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13.00 14.00

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

Slug flatness 0.03 0.10

STB12NM50T4, STP12NM50, STP12NM50FP

TO-220 type A package information

DS1944 - Rev 12 page 12/20

4.3 TO-220FP package information

Figure 22. TO-220FP package outline

7012510_Rev_13_B

STB12NM50T4, STP12NM50, STP12NM50FP

TO-220FP package information

DS1944 - Rev 12 page 13/20

Table 9. TO-220FP package mechanical data

Dim.

Min. Typ. Max.

A4.40 4.60

B 2.50 2.70

D 2.50 2.75

E 0.45 0.70

F 0.75 1.00

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.20

G1 2.40 2.70

H 10.00 10.40

L2 16.00

L3 28.60 30.60

L4 9.80 10.60

L5 2.90 3.60

L6 15.90 16.40

L7 9.00 9.30

Dia 3.00 3.20

STB12NM50T4, STP12NM50, STP12NM50FP

TO-220FP package information

DS1944 - Rev 12 page 14/20

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4.4 D²PAK packing information

Figure 23. D²PAK tape outline

STB12NM50T4, STP12NM50, STP12NM50FP

D²PAK packing information

DS1944 - Rev 12 page 15/20

"ﬁlx 40mm m 7 7 ‘ access al 5b! a Fun radius; ,—_\_‘_l_/’ , ,

Figure 24. D²PAK reel outline

Full radius

Tape slot

in core for

tape start

2.5mm min.width

G measured

at hub

40mm min.

access hole

at slot location

AM06038v1

Table 10. D²PAK tape and reel mechanical data

Tape Reel

Dim.

Min. Max. Min. Max.

A0 10.5 10.7 A330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base quantity 1000

P2 1.9 2.1 Bulk quantity 1000

R 50

T 0.25 0.35

W 23.7 24.3

STB12NM50T4, STP12NM50, STP12NM50FP

D²PAK packing information

DS1944 - Rev 12 page 16/20

5Ordering information

Table 11. Order codes

Order codes Marking Package Packing

STB12NM50T4 B12NM50 D²PAK Tape and reel

STP12NM50 P12NM50 TO-220 Tube

STP12NM50FP P12NM50FP TO-220FP Tube

STB12NM50T4, STP12NM50, STP12NM50FP

Ordering information

DS1944 - Rev 12 page 17/20

Revision history

Table 12. Document revision history

Date Revision Changes

14-Mar-2004 8 Preliminary version

15-Feb-2006 9 New voltage value on first page at tjmax.

05-Apr-2006 10 Inserted ecopack indication

27-Jul-2006 11 New template, no content change

22-Oct-2020 12

The part number STB12NM50-1 have been moved to a separate datasheet and the document

has been updated accordingly.

Updated cover page.

Updated Section 1 Electrical ratings and Section 2 Electrical characteristics.

Added Section Section 5 Ordering information.

Minor text changes.

STB12NM50T4, STP12NM50, STP12NM50FP

DS1944 - Rev 12 page 18/20

Contents

1Electrical ratings ..................................................................2

2Electrical characteristics...........................................................3

2.1 Electrical characteristics (curves) .................................................5

3Test circuits .......................................................................7

4Package information...............................................................8

4.1 D²PAK (TO-263) type A package information .......................................8

4.2 TO-220 type A package information ..............................................11

4.3 TO-220FP package information .................................................13

4.4 D²PAK packing information .....................................................15

5Ordering information .............................................................17

Revision history .......................................................................18

STB12NM50T4, STP12NM50, STP12NM50FP

Contents

DS1944 - Rev 12 page 19/20

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

STB12NM50T4, STP12NM50, STP12NM50FP

DS1944 - Rev 12 page 20/20

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