40TPS Series Datasheet by Vishay General Semiconductor - Diodes Division

International ISBR Rectifier
Major Ratings and Characteristics
IT(AV) Sinusoidal 35 A
waveform
IRMS 55 A
VRRM/ VDRM 800 - 1200 V
ITSM 500 A
VT@ 40 A, TJ = 25°C 1.45 V
dv/dt 1000 V/µs
di/dt 100 A/µs
TJ- 40 to 125 °C
Characteristics 40TPS.. Units
TO-247AC
Description/ Features
The 40TPS... SAFEIR series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125°C junction temperature.
Low Igt parts available.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Package Outline
Range
PHASE CONTROL SCR
1
Bulletin I2107 rev. G 09/03
SAFEIR Series
40TPS..
VT< 1.45V @ 40A
ITSM = 500A
V
RRM = 800 - 1200V
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Irflcmonona ReCfihcr
2
40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
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IT(AV) Max. Average On-state Current 35 A @ TC = 79° C, 180° conduction half sine wave
IT(RMS) Max. Continuous RMS 55
On-state Current As AC switch
ITSM Max. Peak One Cycle Non-Repetitive 500 A 10ms Sine pulse, rated VRRM applied Initial
Surge Current 600 10ms Sine pulse, no voltage reapplied TJ = TJ max.
I2t Max. I2t for Fusing 1250 A2s 10ms Sine pulse, rated VRRM applied
1760 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for Fusing 12500 A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low Level Value of Threshold 1.02 V TJ = 125°C
Voltage
VT(TO)2High Level Value of Threshold 1.23
Voltage
rt1 Low Level Value of On-state 9.74 mΩ
Slope Resistance
rt2 High Level Value of On-state 7.50
Slope Resistance
VTM Max. Peak On-state Voltage 1.85 V @ 110A, TJ = 25°C
di/dt Max. Rate of Rise of Turned-on Current 100 A/µs TJ = 25°C
IHMax. Holding Current 150 mA
ILMax. Latching Current 300
IRRM/ Max. Reverse and Direct 0.5 mA TJ = 25°C
IDRM Leakage Current 10 TJ = 125°C
dv/dt Max. Rate of Rise 40TPS08 500 V/µs TJ = TJ max., linear to 80% VDRM , Rg-k = open
of Off-state Voltage 40TPS12 1000
Voltage Ratings
Part Number
VRRM/ VDRM, max. repetitive VRSM , maximum non repetitive IRRM/ IDRM
peak and off-state voltage peak reverse voltage 125°C
VVmA
40TPS08 800 900 10
40TPS12 1200 1300
Absolute Maximum Ratings
Parameters 40TPS.. Units Conditions
VR = rated VRRM/ VDRM
\rflcmonond ReCfihcr
3
40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
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PGM Max. peak Gate Power 10 W
PG(AV) Max. average Gate Power 2.5
IGM Max. peak Gate Current 2.5 A
- VGM Max. peak negative Gate Voltage 10 V
VGT Max. required DC Gate Voltage 4.0 TJ = - 40°C Anode supply = 6V
to trigger 2.5 TJ = 25°C resistive load
1.7 TJ = 125°C
IGT Max. required DC Gate Current 270 mA TJ = - 40°C
to trigger 150 TJ = 25°C
80 TJ = 125°C
40 TJ = 25°C, for 40TPS08A and 40TPS12A
VGD Max. DC Gate Voltage not to trigger 0.25 V TJ = 125°C, VDRM = rated value
IGD Max. DC Gate Current not to trigger 6 mA
Parameters 40TPS.. Units Conditions
Triggering
Thermal-Mechanical Specifications
TJMax. Junction Temperature Range - 40 to 125 °C
Tstg Max. Storage Temperature Range - 40 to 125
RthJC Max. Thermal Resistance Junction 0.6 °C/W DC operation
to Case
RthJA Max. Thermal Resistance Junction 40
to Ambient
RthCS Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased
to Heatsink
wt Approximate Weight 6 (0.21) g (oz.)
T Mounting Torque Min. 6 (5) Kg-cm
Max. 12 (10) (lbf-in)
Case Style TO-247AC
Parameters 40TPS.. Units Conditions
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4
40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
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Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge
Current
Fig. 6 - Maximum Non-Repetitive Surge Current
70
80
90
100
110
120
130
0 102030405060
DC
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
40TPS.. Serie s
R (DC) = 0.6 °C/W
thJC
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
RM S Li m i t
Conduction Angle
Maximum Avera g e On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
4 0 TPS. . Se r i e s
T = 1 25 ° C
J
0
10
20
30
40
50
60
70
80
0 102030405060
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
40TPS.. Series
T = 125°C
J
250
300
350
400
450
500
550
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
4 0 TP S. . Se r i e s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
250
300
350
400
450
500
550
600
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
40TPS.. Series
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
70
80
90
100
110
120
130
010203040
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-state Current (A)
40TPS.. Series
R (DC) = 0.6 °C/ W
thJC
\rflcmonond ReCfihcr
5
40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
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Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - GateCharacteristics
Fig. 9 - Thermal Impedance ZthJC Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
(1) PGM = 100 W, t p = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
ra t e d d i/ d t : 20 V, 30 ohm s
tr = 0.5 µs, tp >= 6 µs
<= 30% ra t ed d i/ d t: 20 V, 65 o hm s
tr = 1 µs, tp >= 6 µs
40TPS..
1
10
100
0.5 1 1.5 2
T = 2 5 ° C
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
40TPS.. Se rie s
J
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Sing le Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
4 0 TP S. . Se r i e s
thJC
Transient Thermal Impedance Z (°C/W)
Irflcmonona IEZR Recfihcr
6
40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
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40TPS12
56 57
035H
EXAMPLE: THIS IS A 40TPS12 PART NUMBER
LOGO
RECTIFIER
INTERNATIONAL
ASSEMBLY
LOT CODE
LINE H
WEEK 35
YEAR 0 = 2000
DATE CODE
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
Outline Table
Dimensions in millimeters and inches
15.90 (0 .626)
15.30 (0 .602)
14 .20 (0 .559)
14.80 ( 0.583)
3. 70 (0.14 5)
4. 30 (0.17 0)
5.30 ( 0.208)
5. 70 (0 .225)
5.50 (0.217)
4. 50 (0 .177)
(2 PLCS.)
3.55 (0.139)
3. 65 (0.14 4)
2. 20 (0 .087)
MAX.
1. 00 (0.039)
1. 40 (0.05 6)
0.40 (0.213)
0.80 ( 0.032)
4.70 ( 0.185)
5. 30 (0.20 9)
1.5 (0.059)
2.5 ( 0.098)
2.40 (0.095)
MAX.
10 .86 (0.427)
10.94 ( 0.430)
20 .30 (0 .800 )
19 .70 (0 .775 )
DIA.
12 3
Marking Information
iniernoiionoi I911 Rectifier i iniemoiionoi ISZR Rectifier
7
40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
www.irf.com
Ordering Information Table
40 T P S 12
Device Code
15
24
3
1- Current Rating
2- Circuit Configuration:
T = Thyristor
3- Package:
P = TO-247
4- Type of Silicon:
S = Standard Recovery Rectifier
5- Voltage code: Code x 100 = VRRM
6- None = Standard Igt selection
A = Low Igt selection 40mA max. for 40TPS08A
and 40TPS12A
08 = 800V
12 = 1200V
(G) 3
2
(A)
1 (K)
6
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.