IXTN500N20X4/IXTN400N20X4 X4-Class Power MOSFET

The charge compensation principle and proprietary process technology used in the development of the IXYS IXTN500N20X4 and IXTN400N20X4 devices result in power MOSFETs with significantly lower resistance R_DS(ON) and gate charge Q_g. Low on-state resistance minimizes switching losses by lowering the energy held in the output capacitance and reducing conduction losses. A low gate charge reduces the need for a gate drive and increases efficiency at low loads. These MOSFETs also have better dv/dt performance and are avalanche-rated. They can be used in parallel to meet higher current requirements because of the positive temperature coefficient of their on-state resistance.