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IMZA65R015M2HXKSA1 | |
|---|---|
cms-digikey-product-number | 448-IMZA65R015M2HXKSA1-ND |
cms-manufacturer | |
cms-manufacturer-product-number | IMZA65R015M2HXKSA1 |
cms-description | SILICON CARBIDE MOSFET |
cms-standard-lead-time | 61 Weeks |
cms-customer-reference | |
cms-detailed-description | N-Channel 650 V 103A (Tc) 341W (Tc) Through Hole PG-TO247-4-8 |
Datasheet | Datasheet |
cms-product-attributes
cms-type | cms-description | cms-select-all |
|---|---|---|
cms-category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V | |
Rds On (Max) @ Id, Vgs | 13.2mOhm @ 64.2A, 20V | |
Vgs(th) (Max) @ Id | 5.6V @ 13mA | |
Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 18 V | |
Vgs (Max) | +23V, -7V | |
Input Capacitance (Ciss) (Max) @ Vds | 2792 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 341W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-4-8 | |
Package / Case | ||
Base Product Number |
In-Stock: 613
cms-incoming-leadtime-link
cms-quantity
cms-all-prices-in-currency
Tube
| cms-quantity | Unit Price | cms-ext-price |
|---|---|---|
| 1 | ₪56.72000 | ₪56.72 |
| 30 | ₪35.15767 | ₪1,054.73 |
| 120 | ₪31.60833 | ₪3,793.00 |
| Unit Price without VAT: | ₪56.72000 |
|---|---|
| Unit Price with VAT: | ₪66.92960 |
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