PG-TO220-3-1
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IPP60R299CPXKSA1

DigiKey Part Number
448-IPP60R299CPXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPP60R299CPXKSA1
Description
MOSFET N-CH 650V 11A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 11A (Tc) 96W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R299CPXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolMOS™
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP60R299
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In-Stock: 1,000
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Quantity
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$3.11000$3.11
50$1.55520$77.76
100$1.40420$140.42
500$1.13930$569.65
1,000$1.05419$1,054.19
2,000$1.00388$2,007.76
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:$3.11000
Unit Price with VAT:$3.66980