Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
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KSD1616AGBU

DigiKey Part Number
KSD1616AGBU-ND
Manufacturer
Manufacturer Product Number
KSD1616AGBU
Description
TRANS NPN 60V 1A TO-92-3
Manufacturer Standard Lead Time
30 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 2V
Power - Max
750 mW
Frequency - Transition
160MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
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In-Stock: 20,969
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All prices are in ILS
Bulk
QuantityUnit PriceExt Price
1₪1.85000₪1.85
10₪1.13900₪11.39
100₪0.72490₪72.49
500₪0.54536₪272.68
1,000₪0.48738₪487.38
2,000₪0.43856₪877.12
5,000₪0.38566₪1,928.30
10,000₪0.35293₪3,529.30
50,000₪0.29564₪14,782.00
Manufacturers Standard Package
Unit Price without VAT:₪1.85000
Unit Price with VAT:₪2.18300