TK4A60D(STA4,Q,M) Toshiba Semiconductor and Storage | Discrete Semiconductor Products

TK4A60D(STA4,Q,M) is Obsolete and no longer manufactured.

Available Substitutes:

Similar

Toshiba Semiconductor and Storage

In Stock: 0

Unit Price: ₪5.15000

Similar

onsemi

In Stock: 425

Unit Price: ₪10.16000

Similar

Infineon Technologies

In Stock: 330

Unit Price: ₪6.09000

Similar

STMicroelectronics

In Stock: 0

Unit Price: ₪3.89786

Similar

STMicroelectronics

In Stock: 285

Unit Price: ₪0.00000

Similar

STMicroelectronics

In Stock: 2,009

Unit Price: ₪6.49000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK4A60D(STA4,Q,M)
DigiKey Part Number	TK4A60D(STA4QM)-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK4A60D(STA4,Q,M)
Description	MOSFET N-CH 600V 4A TO220SIS
Customer Reference
Detailed Description	N-Channel 600 V 4A (Ta) 35W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK4A60D(STA4,Q,M) Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK4A60