TO-220-3
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TK7E80W,S1X

DigiKey Part Number
TK7E80WS1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK7E80W,S1X
Description
MOSFET N-CH 800V 6.5A TO220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 6.5A (Ta) 110W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
TK7E80W,S1X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK7E80
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In-Stock: 70
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Quantity
All prices are in ILS
Tube
QuantityUnit PriceExt Price
1₪15.75000₪15.75
50₪8.10580₪405.29
100₪7.36590₪736.59
500₪6.06962₪3,034.81
1,000₪5.73464₪5,734.64
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:₪15.75000
Unit Price with VAT:₪18.58500