Name: SQJ858AEP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ858AEP-T1_GE3TR-ND
Price: 7.316 ILS
Availability: InStock

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SQJ858AEP-T1_GE3
DigiKey Part Number	SQJ858AEP-T1_GE3TR-ND - Tape & Reel (TR) SQJ858AEP-T1_GE3CT-ND - Cut Tape (CT) SQJ858AEP-T1_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQJ858AEP-T1_GE3
Description	MOSFET N-CH 40V 58A PPAK SO-8
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 40 V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
EDA/CAD Models	SQJ858AEP-T1_GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mfr Vishay Siliconix	Vgs (Max) ±20V
Series TrenchFET®	Input Capacitance (Ciss) (Max) @ Vds 2450 pF @ 20 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 48W (Tc)
Part Status Active	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 40 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 58A (Tc)	Supplier Device Package PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case PowerPAK® SO-8
Rds On (Max) @ Id, Vgs 6.3mOhm @ 14A, 10V	Base Product Number SQJ858
Vgs(th) (Max) @ Id 2.5V @ 250µA