DCK Series SiC Schottky Barrier Diodes

IXYS, A Littelfuse Technology DCK series of silicon carbide (SiC) Schottky diodes have negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of +175°C.

IXYS, A Littelfuse Technology DCK series 650 V (10 A and 20 A) and 1200 V (10 A, 15 A, 20 A, 30 A, and 40 A) SiC Schottky barrier diodes (SBD) in TO-220-2L, TO-247-2L, and TO-247-3L packages are available in single and common cathode configurations. Littelfuse SiC SBDs enable power electronic systems to achieve higher efficiency, high switching frequencies, and increased power density compared to silicon-based solutions. They are engineered with advanced designs to reduce power losses while maintaining excellent switching performance. This makes them suitable for high-frequency, high-efficiency Power management applications like switch mode power supplies, solar inverters, PV inverters, power factor correction, AC/DC converters, and motor drives, and where improvements in efficiency, reliability, and thermal management are desired.