Name: IQE004NE1LM7CGSCATMA1
Brand: Infineon Technologies
SKU: 448-IQE004NE1LM7CGSCATMA1TR-ND
Price: 9.4046 ILS
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IQE004NE1LM7CGSCATMA1
DigiKey Part Number	448-IQE004NE1LM7CGSCATMA1TR-ND - Tape & Reel (TR) 448-IQE004NE1LM7CGSCATMA1CT-ND - Cut Tape (CT) 448-IQE004NE1LM7CGSCATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IQE004NE1LM7CGSCATMA1
Description	TRENCH <= 40V
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 15 V 58A (Ta), 379A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount PG-WHTFN-9
Datasheet	Datasheet
EDA/CAD Models	IQE004NE1LM7CGSCATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 7
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	15 V
Current - Continuous Drain (Id) @ 25°C	58A (Ta), 379A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 7V
Rds On (Max) @ Id, Vgs	0.45mOhm @ 30A, 7V
Vgs(th) (Max) @ Id	2V @ 432µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 7 V
Vgs (Max)	±7V
Input Capacitance (Ciss) (Max) @ Vds	6240 pF @ 7.5 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-WHTFN-9
Package / Case	9-PowerWDFN