Name: IQE006NE2LM5CGSCATMA1
Brand: Infineon Technologies
SKU: 448-IQE006NE2LM5CGSCATMA1TR-ND
Price: 16.6734 ILS
Availability: InStock

N-Channel 25 V 47A (Ta), 310A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount PG-WHTFN-9-1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IQE006NE2LM5CGSCATMA1
DigiKey Part Number	448-IQE006NE2LM5CGSCATMA1TR-ND - Tape & Reel (TR) 448-IQE006NE2LM5CGSCATMA1CT-ND - Cut Tape (CT) 448-IQE006NE2LM5CGSCATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IQE006NE2LM5CGSCATMA1
Description	OPTIMOS LOWVOLTAGE POWER MOSFET
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 25 V 47A (Ta), 310A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount PG-WHTFN-9-1
Datasheet	Datasheet
EDA/CAD Models	IQE006NE2LM5CGSCATMA1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 0.58mOhm @ 20A, 10V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 2V @ 250µA
Series OptiMOS™ 5	Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±16V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 5453 pF @ 12 V
FET Type N-Channel	Power Dissipation (Max) 2.1W (Ta), 89W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 25 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 47A (Ta), 310A (Tc)	Supplier Device Package PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case 9-PowerWDFN