Image of ROHM Semiconductor's 650 V EcoGaN™ HEMT Power Devices and System-in-Package Power Stage Product

650 V EcoGaN™ HEMT Power Devices and System-in-Package Power Stage Products

ROHM Semiconductor

This presentation will provide an introduction to gallium nitride (GaN) power devices and their end application usage, as well as introduce the product lineup and advantages of 650 V EcoGaN™ HEMT discrete power devices and system-in-package (SiP) power stage solutions from ROHM.

Related Parts

תמונהמק"ט יצרןתיאורכמות זמינהמחירהצגת הפרטים
ECOGAN, 650V 11A DFN8080AK, E-MOGNP1150TCA-ZE2ECOGAN, 650V 11A DFN8080AK, E-MOמיידית - 2611$21.86הצגת הפרטים
ECOGAN, 650V 20A DFN8080K, E-MODGNP1070TC-ZE2ECOGAN, 650V 20A DFN8080K, E-MODמיידית - 2726$35.85הצגת הפרטים
NANO CAP, ECOGAN, 650V 150M 2MHZBM3G015MUV-LBE2NANO CAP, ECOGAN, 650V 150M 2MHZמיידית - 1034$25.80הצגת הפרטים
NANO CAP, ECOGAN, 650V 70M 2MHZ,BM3G007MUV-LBE2NANO CAP, ECOGAN, 650V 70M 2MHZ,מיידית - 0$54.30הצגת הפרטים
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Related Videos

ROHM Semiconductor EcoGaN Power Stage ICs PIO | DigiKey
ROHM Semiconductor EcoGaN Power Stage ICs PIO | DigiKey

תאריך פרסום: 2024-10-07

Related Product Highlight

EcoGaN™ Power Stage ICs ROHM's EcoGaN power stage ICs are ideal for primary power supplies inside industrial and consumer applications.
650 V GaN HEMTs ROHM's 650 V GaN HEMTs increase efficiency and miniaturization in a wide range of power supply systems, including servers and AC adapters.

Related Articles and Blogs

Webinar – High-Voltage GaN HEMT (EcoGaN™) for Power Systems This webinar discusses the impact of GaN on compact, low power consumption devices and ICs that optimize GaN technology.
How GaN HEMTs Can Help You Increase Power Supply Efficiency GaN-based switching devices offer multiple advantages over older silicon options, even when compared to new SiC components.