Silicon Carbide (SiC) MOSFETs

Diotec Semiconductor introduces a silicon carbide (SiC) MOSFET family which features devices with a variety of low R_DS(ON) values ranging from 23 mΩ to 59 mΩ. They are encapsulated in either standard TO-247-3L (with three leads) or in the TO-247-4L, offering a fourth Kelvin-source, which allows for faster switching speeds and lower power losses. Within the product family, Diotec offers the DIF120SIC053-AQ, DIW120SIC023-AQ, and DIW120SIC059-AQ, where “-AQ” stands for full AEC-Q101 qualification.

In the context of power electronics where industries seek to enhance energy efficiency, SiC emerges as a promising next-generation technology. It promises superior capabilities that outrank the conventional silicon-based power MOSFETs, including a higher voltage breakdown and significantly reduced energy loss. Addressing the demands of the market, Diotec provides a diverse variety of SiC MOSFETs which cover a comprehensive portfolio for applications in industrial machinery, power conversion systems, photovoltaic inverters, and automotive EV charging.

The implementation of wide band gap technology enables these components to function in a stable manner in high-temperature applications. With a comparatively lower ON-state resistance, SiC MOSFETs generate lower per-cycle switching loss and significantly enhance efficiency while maintaining a higher switching speed in a power conversion system. As a result, SiC MOSFETs emerge as the primary solution for various applications, particularly involving high-voltage switching at higher frequencies, a limitation encountered with silicon-based MOSFETs. Furthermore, the AEC-Q101 qualification solidifies the robustness and high reliability of SIC MOSFET performance, especially within the automotive industry.