Silicon Carbide Schottky Diode

GeneSiC Semiconductor introduces their Silicon Carbide Power Schottky diode. The advantage of these products is improved circuit efficiency (lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance, and low reverse leakage current at operating temperature. At 1200 V, customers have a wide range of amperages and package sizes. These products are RoHS compliant.