Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series

Littelfuse offers the enhancement-mode SiC MOSFET, 1200 V, N-channel LSIC1MO120E series

Image of Littelfuse's Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E0080 SeriesLittelfuse's SiC MOSFET LSIC1MO120E series provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.

State of the SiC MOSFET: Device Evolution, Technology Merit, and Commercial Prospects

Features
  • Ultra-fast switching speeds
  • Lower switching losses
  • High temperature operation
  • High blocking voltages and low specific on-resistance (SiC material properties)
Applications
  • Power conversion systems
  • Solar inverters
  • Switch mode power supplies
  • UPS systems
  • Motor drives
  • High voltage DC/DC converters
  • Battery chargers

Silicon Carbide (SiC) Ultra-Fast Switching MOSFET

תמונהמק"ט יצרןתיאורמתח מרזב-למקור (Vdss)זרם - מרזב רצוף (Id) ב- 25°Cכמות זמינהמחירהצגת הפרטים
SICFET N-CH 1200V 39A TO247-3LSIC1MO120E0080SICFET N-CH 1200V 39A TO247-31200 V39A (Tc)מיידית - 359$67.49הצגת הפרטים
SICFET N-CH 1200V 20A TO247-3LSIC1MO120E0160SICFET N-CH 1200V 20A TO247-31200 V20A (Tc)מיידית - 22
Factory Stock - 1350
$36.40הצגת הפרטים
2018-01-05 תאריך הפרסום