Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series
Littelfuse offers the enhancement-mode SiC MOSFET, 1200 V, N-channel LSIC1MO120E series
Littelfuse's SiC MOSFET LSIC1MO120E series provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.
State of the SiC MOSFET: Device Evolution, Technology Merit, and Commercial Prospects
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Silicon Carbide (SiC) Ultra-Fast Switching MOSFET
| תמונה | מק"ט יצרן | תיאור | מתח מרזב-למקור (Vdss) | זרם - מרזב רצוף (Id) ב- 25°C | כמות זמינה | מחיר | הצגת הפרטים | |
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![]() | ![]() | LSIC1MO120E0080 | SICFET N-CH 1200V 39A TO247-3 | 1200 V | 39A (Tc) | מיידית - 359 | $67.49 | הצגת הפרטים |
![]() | ![]() | LSIC1MO120E0160 | SICFET N-CH 1200V 20A TO247-3 | 1200 V | 20A (Tc) | מיידית - 22 Factory Stock - 1350 | $36.40 | הצגת הפרטים |





