Power Bipolar Transistors

STMicroelectronics' broad range of power bipolar transistors will give the user the perfect fit for their energy-efficient designs. The range includes Darlington transistors and BJTs with a V_CES from 15 V to 1700 V.

Key features of ST's power bipolar transistors include the following:

• Fast switching times and very-low saturation voltage, resulting in reduced switching and conduction losses
• Integrated diode versions for reduced component count
• Well-controlled h_FE parameter for increased reliability
• Best cost-performance ratio
• 15 V to 120 V BJTs based on the second generation of base island technology for improved V_CE(SAT) and gain
• 150 V to 300 V dedicated parts featuring excellent gain linearity and pair matching for professional class AB audio amplifiers
• Very-high gain characteristics for reduced driving requirements
• Very-low saturation to minimize conduction losses
• High switching speed
• Wide portfolio of miniaturized SMD packages, including the latest PowerFlat™ 2 x 2 mm² package

View All of STMicroelectronics' Power Bipolar Transistors