PerFET™ Series of 40 V MOSFETs Improves SMPS Performance

Taiwan Semiconductor's PerFET series of single- and dual-channel 40 V power MOSFETS are built on proprietary device structures and processes that enable exceptionally low on-state resistance (R_DS(ON)) and switching figure of merit (FOM). The PerFET device’s achievement of 50% R_DS(ON) and 40% FOM reduction puts this portfolio at the industry’s leading edge of performance. The 40 V N-channel PerFET platform includes options for both standard (10 V) and logic level (5 V) gate-drive requirements while preserving rugged safe-operating area margin when switching voltage transients and avalanche occurs in switching applications.

Features

• 50% reduction in R_DS(ON): Lower power losses
• 40% FOM improvement: Improved switching performance
• Wettable flank leads: Improved solder joint reliability and automated optical inspection (AOI)
• Single- and dual-channel packages
• 100% UIS and R_g tested
• AEC-Q automotive qualified: +175°C T_j(max) compelling for automotive and industrial applications; Production Part Approval Process (PPAP) documentation is available
• Global materials compliance: RoHS compliant, halogen-free (per IEC-61249-2-21), WEEE, REACH, California Prop. 65, JESD-201 Class 2 whisker test, and others