Wide Bandgap SiC 650 V Schottky Barrier Diodes

Taiwan Semiconductor's 650 V silicon carbide Schottky barrier diodes are suitable for high-efficiency AC/DC, DC/DC, and DC/AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (Q_C). This makes them suitable for high-speed switching applications, benefiting circuit designs with increased power density and can reduce overall solution size.

The SiC devices combine Schottky diodes for low forward voltage drop and P-N junction diodes for high reverse breakdown voltage, making them the ultimate protectors for power lines, control buttons, and data cables.