The EPC9066 development board is a 40 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives

The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives

The EPC9051 is a high efficiency, differential mode class-E amplifier demonstration board that can operate up to 15 MHz. This board may also be used for applications where a low side switch is utilized. Examples include, and are not limited to, push-pull converters, current-mode Class D amplifiers, common source bi-directional switch, and generic high voltage narrow pulse width applications such as LiDAR.

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage.

The EPC9048 development boards are in a half bridge topology with onboard gate drives, featuring the EPC2034 eGaN field effect transistors (FETs).

Evaluation board for the "Inverter Power H-IC" highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single small SIP module.

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

The EPC9080 development board is a 100 V maximum device voltage,30 A maximum output current, half bridge with onboard gate drives

The EPC9013 development board features the 100 V EPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum

The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2019