The EVALMASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The TIDA-01634 reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power HEMTs. With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth.

The LMG1210EVM-012 is a small, easy-to-use power stage with an external PWM signal (or HI and LI). The board can be configured as a buck converter, boost converter or other converter topology using a half bridge.

The TDHBG1200DC100 1.2 kW half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with GaN FETs.

This development board is in a half bridge topology with onboard gate drives, featuring theEPC2035/36 eGaN® field effect transistors

The EPC9051 is a high efficiency, differential mode class-E amplifier demonstration board that can operate up to 15 MHz. This board may also be used for applications where a low side switch is utilized. Examples include, and are not limited to, push-pull converters, current-mode Class D amplifiers, common source bi-directional switch, and generic high voltage narrow pulse width applications such as LiDAR.

This development board is in a half bridge topology with onboard gate drives, featuring the EPC2035/36 eGaN® field effect transistors

The EPC9067 development board is a 65 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives

The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs).

The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs).