The IXYS IX4352NEAU gate driver is specifically designed to drive SiC MOSFETs and high-power IGBTs with separate source and sink outputs.

ה-SiC MOSFETs‏, תיריסטורים עם שער MOS והמיישרים של Littelfuse‏ מאפשרים תכני SMPS יעילים ואמינים עבור מטעני רכבים חשמליים, ממירים סולאריים ודוחפי מנועים.

מוצר חדש

IXYS/Littelfuse industrial-grade, single-switch SiC MOSFETs exhibit good power cycling characteristics and very fast, low-loss switching behavior.

IXYS IX3407B galvanically isolated, single-channel gate drivers provide a typical 7 A peak source and sink output current on separate output pins.

מוצר חדש

IXYS/Littelfuse IXSJxxN120R1 high-efficiency 1200 V SiC MOSFETs offer exceptional performance in high-voltage, high-efficiency power conversion systems.

The IXYS DFNAK3 series is a family of high-power TVS diodes designed for robust surge protection in AC and DC line applications.

IXYS LX5 series 0.8 A sensitive TRIACs offer direct interface-to-microprocessor drivers in economical TO-92 and surface-mount packages.

IXYS D60xxS4ARP series automotive-grade silicon rectifiers in SOD-123FL packages have glass-passivated junctions, providing stable operation.

IXYS SK230 30 A standard SCRs feature surge capability up to 290 A.

IXYS/Littelfuse IXD2012N gate driver ICs are designed for efficient control of power transistors in various applications.

דיודות מחסום Schottky סיליקון קרביד (SiC)‏ IXYS 650 V/1200 V הן אידיאליות עבור יישומים הדורשים נצילות, אמינות וניהול תרמי משופרים.

The DPF100C1200HB power diode from IXYS features a fast-recovery epitaxial diode (FRED) structure that provides superior switching performance and efficiency.

The IXYS LSIC2SD065D40CC is a state-of-the-art silicon carbide (SiC) Schottky barrier diode designed to deliver superior performance in high-power applications.

IXYS IXTN500N20X4/IXTN400N20X4 are used in parallel to meet high current requirements due to the positive temperature coefficient of their on-state resistance.

IXYS IX4341/IX4342 MOSFET gate drivers feature two independent drivers, either both with inverting capability or one inverting and one non-inverting.

IXYS 12 A high-temperature alternistor TRIACs are rated +150°C max junction temperature and 153 A non-repetitive surge peak on-state current.

IXYS' automotive-grade Pxxx0S3N-A SIDACtor series provides robust AC power line protection from overvoltage transients in hostile environments.

Littelfuse/IXYS' DSEP60-06AZ fast recovery diodes are suitable for high-frequency applications due to low leakage current and short recovery time.

IXYS' IXTY2P50PA is an AEC-Q101-qualified and PPAP available, -500 V, -2 A, PolarP™ P-channel enhancement mode power MOSFET in TO-252 (DPAK) package.

Littelfuse's IXTx60N20X4 Ultra Junction X4-class discrete power MOSFETs enable designers to achieve higher efficiency and increased power density.