Split-Gate Technology MOSFETs
MCC’s split-gate technology MOSFETs are suitable for space-saving and high-efficiency requirements in applications
Micro Commercial Components' split-gate technology MOSFETs offer extremely low RDS(on) value and allow higher current density in smaller packages. This makes them suitable for space-saving and high-efficiency requirements in applications.
- Increases BVDSS
- Higher N-doping in the drift region minimizes RDS(on)
- Decreases QGD that reduces Miller charge coupling
- Improved FOM reduces switching and conduction losses
- Current SGT portfolio offering ranges from 30 V to 150 V rating and 1.5 mΩ lowest RDS(on) value in common packages
- Wide range of LV MOSFET portfolio
- Low RSP value (specific on-state resistance)
- High efficiency
- High quality
- Fast delivery
Split-Gate Technology MOSFET's
תמונה | מק"ט יצרן | תיאור | כמות זמינה | מחיר | הצגת הפרטים | |
---|---|---|---|---|---|---|
![]() | ![]() | MCAC80N10Y-TP | MOSFET N-CH 100 80A DFN5060 | מיידית - 20485 | $9.76 | הצגת הפרטים |
![]() | ![]() | MCAC30N06Y-TP | MOSFET N-CH 60 30A DFN5060 | מיידית - 4 | $4.20 | הצגת הפרטים |
![]() | ![]() | MCAC50N10Y-TP | MOSFET N-CH 100 50A DFN5060 | מיידית - 5297 | $8.83 | הצגת הפרטים |
![]() | ![]() | MCU60P06-TP | MOSFET P-CH 60V 60A DPAK | מיידית - 14768 | $11.48 | הצגת הפרטים |