PowerTrench® MOSFETs

onsemi T10 series MOSFETs in a compact 5 mm x 6 mm package offer a low total gate charge and improved recovery characteristics

Image of onsemi's PowerTrench® MOSFETsonsemi PowerTrench MOSFETs represent a leap in efficiency and performance. The transition from T6/T8 to T10 has been characterized by substantial improvements in on-resistance and switching performance, which are critical for energy-sensitive designs. The T10 series boasts optimal on-resistance in a compact 5 mm x 6 mm package, offering a lower total gate charge and improved recovery characteristics, translating to less energy wasted as heat, better reliability, and enhanced performance in high-frequency switching applications.

T10 MOSFETs feature higher avalanche current and energy capability, ensuring robustness under extreme conditions. These advancements are not just incremental; they are transformative, enabling more compact, efficient, and powerful electronic devices. From DC/DC converters to motor drives, PowerTrench technology has set standards for what is possible in power management solutions.

Features
  • Lowering switching losses at higher frequency
  • Better heat dissipation
  • Improved conduction losses from lower RDS(ON)
  • Smaller, higher power density packages
  • AEC-qualified 40 V to 80 V T10 MOSFETs
  • 30% to 40% Rsp reduction vs. previous generation
  • 2x reduction in Qg, Qsw, and Qoss
  • Softer recovery diode and lower Qrr
  • 10% higher UIS capability
Applications
  • Data centers
  • DC/DC power conversion stages
  • General usage and suitable for many different applications

PowerTrench® MOSFETs

תמונהמק"ט יצרןתיאורכמות זמינהמחירהצגת הפרטים
40V T10M IN S08FL HEFET GEN 2 PANTMFS0D4N04XMT1G40V T10M IN S08FL HEFET GEN 2 PAמיידית - 0$13.12הצגת הפרטים
40V T10M IN S08FL HEFET GEN 2 PANTMFS0D5N04XMT1G40V T10M IN S08FL HEFET GEN 2 PAמיידית - 0$11.71הצגת הפרטים
40V T10M IN S08FL HEFET GEN 2 PANTMFS0D6N04XMT1G40V T10M IN S08FL HEFET GEN 2 PAמיידית - 0$10.89הצגת הפרטים
40V T10M IN S08FL PACKAGENTMFS0D7N04XMT1G40V T10M IN S08FL PACKAGEמיידית - 47$8.62הצגת הפרטים
40V T10M IN S08FL PACKAGENTMFS1D1N04XMT1G40V T10M IN S08FL PACKAGEמיידית - 2256$7.97הצגת הפרטים
40V T10M IN S08FL PACKAGENTMFS1D3N04XMT1G40V T10M IN S08FL PACKAGEמיידית - 1283$7.02הצגת הפרטים
40V T10M IN S08FL PACKAGENTMFS2D3N04XMT1G40V T10M IN S08FL PACKAGEמיידית - 563$5.54הצגת הפרטים
40V T10M IN S08FL PACKAGENTMFS3D1N04XMT1G40V T10M IN S08FL PACKAGEמיידית - 0$5.02הצגת הפרטים
MOSFET - POWER, SINGLE, N-CHANNENTMFWS1D5N08XT1GMOSFET - POWER, SINGLE, N-CHANNEמיידית - 0$13.22הצגת הפרטים
T10 80V STD NCH MOSFET SO8FLNTMFS2D1N08XT1GT10 80V STD NCH MOSFET SO8FLמיידית - 0$11.05הצגת הפרטים
T10 80V STD NCH MOSFET SO8FLNTMFS2D5N08XT1GT10 80V STD NCH MOSFET SO8FLמיידית - 0$10.00הצגת הפרטים
T10 80V STD NCH MOSFET SO8FLNTMFS3D0N08XT1GT10 80V STD NCH MOSFET SO8FLמיידית - 0$9.28הצגת הפרטים
T10 80V STD NCH MOSFET SO8FLNTMFS3D5N08XT1GT10 80V STD NCH MOSFET SO8FLמיידית - 0$7.64הצגת הפרטים
T10 80V STD NCH MOSFET SO8FLNTMFS4D0N08XT1GT10 80V STD NCH MOSFET SO8FLמיידית - 0$6.79הצגת הפרטים
MOSFET, POWER 80V SINGLE N-CHANNNTBLS0D8N08XTXGMOSFET, POWER 80V SINGLE N-CHANNמיידית - 0$26.17הצגת הפרטים
PTNG 100V LOW Q3.2MOHM N-FET, HENTMFS3D2N10MDT1GPTNG 100V LOW Q3.2MOHM N-FET, HEמיידית - 2448$15.31הצגת הפרטים
N-CHANNEL SHIELDED GATE POWERTRENTMFS4D2N10MDT1GN-CHANNEL SHIELDED GATE POWERTREמיידית - 0$11.71הצגת הפרטים
PTNG 100V LOW Q 12MOHM N-FET, U8NTTFS012N10MDTAGPTNG 100V LOW Q 12MOHM N-FET, U8מיידית - 4156$7.80הצגת הפרטים
2024-09-09 תאריך הפרסום