Generation 1.5 SiC Schottky Barrier Diode

PANJIT’s generation 1.5 silicon carbide (SiC) Schottky barrier diode (SBD) was developed for electrical ‎‎engineers to design higher-performance ‎systems with lower heat dissipation. A fast recovery diode ‎‎(FRD) ‎has some reverse recovery current at turn-off operation, generating ‎additional switching ‎losses when ‎the main switch is turned on. In contrast, the Schottky barrier diode has no reverse ‎recovery current, ‎so it ‎can be used at a higher switching frequency, but it has a drawback of lower ‎breakdown voltage due to ‎higher leakage.‎ SiC ‎devices have higher bandgap energy than silicon ‎devices, meaning very low leakage current. SiC ‎devices have higher electron velocity, ‎bringing up ‎superior switching performance over silicon ‎devices.

PANJIT's SiC SBD Gen.1.5 is optimized to have low temperature dependency for forward voltage (V_F)‎, so conduction losses can be ‎suppressed in higher temperature operation.‎ It ‎has a junction barrier Schottky (JBS) structure by adding a P+ layer on the ‎metal ‎contact area. As a ‎result, surge current capacity can be dramatically improved, which is helpful to ‎ensure system-level ‎reliability for ‎cold-start system operation.‎ PANJIT's SiC SBD Gen.1.5 lineup has 650 V and 1,200 V breakdown voltages, current ratings ‎of 4 A to 40 ‎A, and various discrete packages such as TO-‎‎220AC, TO-252AA, and TO-247AD-3LD‎.