TRSxxx65H Schottky Barrier Diodes

The Toshiba TRSxxx65H series SiC SBDs for industrial equipment use a third-generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure. These devices achieve a very low forward voltage of 1.2 V (typ.), 17% lower than the 1.45 V (typ.) of the previous generation. They also improve the trade-offs between forward voltage and total capacitive charge and between forward voltage and reverse current, which reduces power dissipation and improves the efficiency of equipment. Products are housed in TO-220-2L packages and five in DFN8×8 packages.