ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look

ROHM’s 4th Generation Silicon Carbide MOSFETs enable lower losses with high reliability. They are easy to drive, and ideal for next-generation EVs, renewable energy, and other power converter applications. The 4th Generation SiC MOSFET technology provides a number of benefits, including lower ON resistance, excellent short-circuit capability, faster switching speed, and flexible gate drive voltages. These improvements contribute to higher energy efficiency and downsized power systems. ROHM’s latest SiC MOSFET is based on an optimized double trench structure, featuring industry-leading performance at competitive prices. With forty percent reduction of on-resistance, the SiC MOSFETs provide drastically improved conduction losses and power handling capability. In contrast to earlier products, the 4th Generation SiC MOSFETs offer faster switching speed and lower losses. Higher switching frequency and excellent efficiency helps reduce the size of passive components and simplify the cooling design, contributing to compact and lightweight converter systems. With great energy efficiency and design freedom, ROHM's 4th generation MOSFETs are well suited for a variety of automotive and industrial power systems, such as motor drives, solar inverters, EV chargers and much more.