4th Generation Silicon Carbide SiC MOSFETs

ROHM's SiC MOSFETs feature a superior breakdown voltage that can withstand higher voltages, enabling compact system designs

Image of ROHM’s 4th Generation Silicon Carbide SCT MOSFETsROHM's 4th generation SCT4xxx series MOSFETs are revolutionary silicon carbide (SiC) power devices designed to deliver unparalleled efficiency and performance in demanding applications. Leveraging the inherent advantages of SiC technology, these MOSFETs offer significant benefits over traditional silicon MOSFETs. They feature a superior breakdown voltage that can withstand higher voltages, enabling compact system designs. They have ultra-low on-resistance (RDS(ON)) that reduces conduction loss and improves energy efficiency, along with high-speed switching, which enables faster switching frequencies and minimizes switching loss. These MOSFETs have exceptional thermal performance and operate at higher temperatures for increased system reliability.

Features
  • Breakdown voltage range: 650 V to 1700 V
  • Drain current range: 3.7 A to 70 A
  • Low RDS(ON)
  • High-speed switching
  • Superior thermal conductivity
  • TO-247 package
  • RoHS compliant
Applications
  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Electric vehicle (EV) chargers
  • Induction heating equipment
  • Motor drives
  • Trains
  • Wind power converters
  • Data center power supplies
  • Industrial automation equipment
  • Welding equipment
  • Battery chargers
  • High-performance audio amplifiers
  • Aircraft power systems

SiC MOSFETs

תמונהמק"ט יצרןתיאורכמות זמינהמחירהצגת הפרטים
SICFET N-CH 1200V 17A TO247NSCT3160KLGC11SICFET N-CH 1200V 17A TO247Nמיידית - 75$24.12הצגת הפרטים
SICFET N-CH 650V 39A TO247NSCT3060ALGC11SICFET N-CH 650V 39A TO247Nמיידית - 167$55.09הצגת הפרטים
SICFET N-CH 650V 70A TO247NSCT3030ALGC11SICFET N-CH 650V 70A TO247Nמיידית - 4093$91.59הצגת הפרטים
SICFET N-CH 1200V 55A TO247NSCT3040KLGC11SICFET N-CH 1200V 55A TO247Nמיידית - 661$140.29הצגת הפרטים
SICFET N-CH 1200V 95A TO247NSCT3022KLGC11SICFET N-CH 1200V 95A TO247Nמיידית - 198$186.55הצגת הפרטים
SICFET N-CH 650V 93A TO247NSCT3022ALGC11SICFET N-CH 650V 93A TO247Nמיידית - 450$158.52הצגת הפרטים
SICFET N-CH 1200V 72A TO247NSCT3030KLGC11SICFET N-CH 1200V 72A TO247Nמיידית - 253$216.55הצגת הפרטים
SICFET N-CH 1700V 4A TO268SCT2H12NYTBSICFET N-CH 1700V 4A TO268מיידית - 12$25.88הצגת הפרטים
SICFET N-CH 1700V 3.7A TO3PFMSCT2H12NZGC11SICFET N-CH 1700V 3.7A TO3PFMמיידית - 621$24.73הצגת הפרטים
SICFET N-CH 650V 21A TO247NSCT3120ALGC11SICFET N-CH 650V 21A TO247Nמיידית - 3858$34.88הצגת הפרטים
1200V, 10A, THD, SILICON-CARBIDESCT2450KEGC111200V, 10A, THD, SILICON-CARBIDEמיידית - 503$42.06הצגת הפרטים
SICFET N-CH 650V 30A TO247NSCT3080ALGC11SICFET N-CH 650V 30A TO247Nמיידית - 549$25.27הצגת הפרטים
1200V, 62M, 3-PIN THD, TRENCH-STSCT4062KEC111200V, 62M, 3-PIN THD, TRENCH-STמיידית - 4706$45.04הצגת הפרטים
SICFET N-CH 1200V 31A TO247-4LSCT3080KRC14SICFET N-CH 1200V 31A TO247-4Lמיידית - 130$63.81הצגת הפרטים
1200V, 40A, 7-PIN SMD, TRENCH-STSCT4036KW7TL1200V, 40A, 7-PIN SMD, TRENCH-STמיידית - 244$57.67הצגת הפרטים
750V, 26M, 4-PIN THD, TRENCH-STRSCT4026DRC15750V, 26M, 4-PIN THD, TRENCH-STRמיידית - 3424$66.39הצגת הפרטים
1200V, 36M, 4-PIN THD, TRENCH-STSCT4036KRC151200V, 36M, 4-PIN THD, TRENCH-STמיידית - 4526$67.43הצגת הפרטים
1200V, 36M, 3-PIN THD, TRENCH-STSCT4036KEC111200V, 36M, 3-PIN THD, TRENCH-STמיידית - 4667$67.47הצגת הפרטים
1200V, 43A, 4-PIN THD, TRENCH-STSCT4036KRHRC151200V, 43A, 4-PIN THD, TRENCH-STמיידית - 506$71.63הצגת הפרטים
750V, 98A, 7-PIN SMD, TRENCH-STRSCT4013DW7TL750V, 98A, 7-PIN SMD, TRENCH-STRמיידית - 1085$100.13הצגת הפרטים
2024-03-19 תאריך הפרסום