Gen 3 1,200 V SiC Schottky Diodes

Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs. The diodes’ MPS structure, which features a backside thinned via laser annealing technology, reduces their forward-voltage drop. The devices’ low typical reverse leakage current reduces conduction losses, ensuring high system efficiency during light loads and idling. To further improve efficiency, the Gen 3 diodes have virtually no recovery tail, unlike ultrafast diodes.

These diodes offer AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converters for applications such as solar power inverters, energy storage systems, industrial drives and tools, and datacenters.