Fourth-Generation E/EF Series MOSFETs
Vishay's MOSFETs feature reduced switching and conduction losses
Vishay's Gen. 4 600 V and 650 V superjunction MOSFETs in PowerPAK package technology enable 10 times the reduction of Qrr to avoid hard commutation in bridge technologies. They also offer a reduction of Co(ter) in charging/discharging time to achieve optimized ZVS operation. Low RDS(ON) x Qg FOM helps engineers increase power density and system efficiency.
- 4th generation E/EF series technology
- Low FOM RON x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Kelvin connection for reduced gate noise
- Server and telecom power supplies
- Switch-mode power supplies (SMPS)
- Power factor correction (PFC) power supplies
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
Fourth-Generation E/EF Series MOSFETs
| תמונה | מק"ט יצרן | תיאור | זרם - מרזב רצוף (Id) ב- 25°C | Rds מצב מופעל (מקס') @ Id, Vgs | כמות זמינה | מחיר | הצגת הפרטים | |
|---|---|---|---|---|---|---|---|---|
![]() | ![]() | SIHH085N60EF-T1GE3 | EF SERIES POWER MOSFET WITH FAST | 30A (Tc) | mOhm85, A17, V10 | מיידית - 5635 | $29.57 | הצגת הפרטים |
![]() | ![]() | SIHH080N60E-T1-GE3 | E SERIES POWER MOSFET POWERPAK 8 | 32A (Tc) | mOhm80, A17, V10 | מיידית - 3608 | $21.25 | הצגת הפרטים |
![]() | ![]() | SIHH068N60E-T1-GE3 | MOSFET N-CH 600V 34A PPAK 8 X 8 | 34A (Tc) | mOhm68, A15, V10 | מיידית - 86 | $32.69 | הצגת הפרטים |
![]() | ![]() | SIHH070N60EF-T1GE3 | MOSFET N-CH 600V 36A PPAK 8 X 8 | 36A (Tc) | mOhm71, A15, V10 | מיידית - 3000 | $31.76 | הצגת הפרטים |
![]() | ![]() | SIHR080N60E-T1-GE3 | E SERIES POWER MOSFET POWERPAK 8 | 51A (Tc) | mOhm84, A17, V10 | מיידית - 1990 | $27.13 | הצגת הפרטים |




