Product Highlights

Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability.

Diotec Semiconductor Silicon Carbide (SiC) MOSFETs are offered with an AEC-Q101 automotive qualification.

Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.

onsemi high-performance SiC cascode JFETs deliver excellent switching speed, lower switching losses, and higher efficiency.

Littelfuse's LSIC1MO170E1000 SiC MOSFET is used as a power semiconductor switch in high-frequency power systems that require a 1,700 V device.

The 1700 V SiC MOSFETs from Wolfspeed are optimized for excellent versatility in auxiliary power supplies.

onsemi’s M3S EliteSiC MOSFET has optimized performance for fast switching applications, maximizing efficiency and minimizing energy loss.

Features superior surge current capability, positive temperature coefficient of Vf, superior figure of merit Qc/If and much more.

onsemi NTBL023N065M3S EliteSiC family of silicon carbide (SiC) MOSFETs are designed to deliver exceptional performance in high-speed switching applications.

onsemi EliteSiC schottky diodes feature no reverse recovery current, temperature independent switching characteristics, and excellent thermal performance.

onsemi's NTBG070N120M3S 1200V M3S SiC MOSFETs are built for speed, shrugging off negative gate voltages and gate spikes thanks to planar technology.

מוצר חדש

Central Semiconductor silicon carbide N-channel MOSFETs feature ultra-low on-resistance for minimized conduction losses and higher energy efficiency.

Silicon Carbide (SiC) devices have the potential to revolutionize today’s power electronics; featuring fast switching times, high blocking voltage capabilities & the ability to operate at high temperatures.

Wolfspeed YM SiC power modules have an optimized power terminal layout for minimized package inductance, reduced overshoot voltage and ultra-low switching loss.

Vishay's silicon carbide schottky carrier diodes feature virtually no recovery tail and no switching losses.

Wolfspeed 1,200 V discrete silicon carbide MOSFETs offer low RDS(ON) over temperature.

The onsemi NVH4L050N170M1 high-performance silicon carbide MOSFET features planar technology for reliable operation.

onsemi 900 V silicon carbide (EliteSiC) MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon.

Infineon’s CoolSiC™ 1200 V silicon carbide Schottky diode is available in a D²PAK real 2-pin package.

Vishay VS-SCx0BA120 silicon carbide bridge modules utilize advanced SiC Schottky diode technology.