MasterGaN Series High-Voltage Half-Bridge Gate Drivers with Embedded GaN FETs

STMicroelectronics' MasterGaN series is an advanced power system in package (SiP) integrating a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature 650 V drain-source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MasterGaN series allows far greater power supply efficiency and higher power density to drastically reduce the cost of ownership. The greater power density can help designers develop fast chargers and USB-PD adapters as much as four times smaller and three times lighter.

Thanks to the superior efficiency and frequency performance with respect to conventional Si MOSFET, heatsinks can be either eliminated or heavily reduced in size, translating into immediate weight reduction benefits for fast chargers, USBPD adapters, LED lighting drivers, TV power supplies, and server/telecom power supply design.

Features

• 600 V SiP integrating half-bridge gate driver and high-voltage power GaN transistors
• QFN 9 mm x 9 mm x 1 mm package
• Embedded gate driver easily supplied by the integrated bootstrap diode
• Overtemperature protection
• Extended 3.3 V to 15 V input range with hysteresis and pull-down
• Accurate internal timing match
• Interlocking function
• -40°C to +125°C operating temperature range
• High switching frequency >1 MHz
• No investment to learn GaN required
• Fast time-to-market

Applications

• Switch-mode power supplies
• Chargers and adapters
• High-voltage PFCs
• DC/DC and DC/AC converters
• UPS systems
• Solar power

Product Table (click to enlarge)