GaN ICs for Wireless Power

EPC's GaN semiconductors are the core of large surface area wireless power

Image of EPC's GaN SemiconductorsEPC’s 100 V EPC2107 and 60 V EPC2108 eGaN half-bridge power integrated circuits with integrated bootstrap FET eliminate gate driver induced reverse recovery loses as well as the need for a high side clamp. Designed specifically for resonant wireless power transfer applications, these products enable rapid design of highly efficient end-use systems, setting the stage for mass adoption of wireless power circuits.

Features
  • Higher switching frequency
    • Lower switching losses, lower parasitic inductance, and lower drive power
  • Integrated design
    • Increased efficiency, increased power density, reduced assembly costs
  • Small footprint
    • Low inductance, extremely small, 1.35 mm x 1.35 mm BGA surface-mount passivated die
Applications
  • Wireless power for 5G
  • Mobile devices
  • Robots
  • Industrial automation
  • Medical equipment and automotive

GaN Semiconductors

תמונהמק"ט יצרןתיאורכמות זמינהמחירהצגת הפרטים
MOSFET 3N-CH 100V 9BGAEPC2107MOSFET 3N-CH 100V 9BGAמיידית - 4982$10.19הצגת הפרטים
MOSFET 3N-CH 60V/100V 9BGAEPC2108MOSFET 3N-CH 60V/100V 9BGAמיידית - 736$9.19הצגת הפרטים

Associated Development Boards

תמונהמק"ט יצרןתיאורכמות זמינהמחירהצגת הפרטים
MULTI-MODE WIRELESS POWER AMPLIFEPC9511MULTI-MODE WIRELESS POWER AMPLIFמיידית - 0$1,356.58הצגת הפרטים
EVAL BRD EPC2036 EPC2038 EPC2107EPC9121EVAL BRD EPC2036 EPC2038 EPC2107מיידית - 0See Page for Pricingהצגת הפרטים
EVAL BRD EPC2019 EPC2036 EPC2107EPC9127EVAL BRD EPC2019 EPC2036 EPC2107מיידית - 0$3,255.78הצגת הפרטים
EVAL BOARD FOR EPC2108EPC9064EVAL BOARD FOR EPC2108מיידית - 0$709.40הצגת הפרטים
2018-12-27 תאריך הפרסום